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- [3] PHOTOLUMINESCENCE DETERMINATION OF WELL DEPTH OF GA0.47IN0.53AS/AL0.48IN0.52AS IN AN ULTRATHIN SINGLE QUANTUM WELL PHYSICAL REVIEW B, 1985, 32 (06): : 3806 - 3810
- [4] ABSORPTION-SPECTROSCOPY ON GA0.47IN0.53AS AL0.48IN0.52AS MULTI-QUANTUM-WELL HETEROSTRUCTURES .1. EXCITONIC TRANSITIONS PHYSICAL REVIEW B, 1987, 36 (08): : 4301 - 4309
- [5] ABSORPTION-SPECTROSCOPY ON GA0.47IN0.53AS AL0.48IN0.52AS MULTI-QUANTUM-WELL HETEROSTRUCTURES .2. SUBBAND STRUCTURE PHYSICAL REVIEW B, 1987, 36 (08): : 4310 - 4315
- [6] Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers Technical Physics Letters, 2006, 32 : 299 - 301