THE PHOTOLUMINESCENCE SPECTRA OF N+, ZN+ IMPLANTED GAAS1-XPX AT 1.8-4.2K

被引:0
|
作者
XU, JY
CHEN, LH
GONG, JS
XU, ZY
LI, YZ
ZHUANG, WH
XU, JZ
WU, LX
机构
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:454 / 456
页数:3
相关论文
共 16 条
  • [1] 1.8—4.2KGaAs1-xPx注N+,注Zn+光荧光谱
    徐俊英
    陈良惠
    弓继书
    徐仲英
    庄蔚华
    李玉璋
    许继宗
    吴灵犀
    物理学报, 1984, (06) : 833 - 839
  • [2] Influence of ionic character on GaAs1-xPx:N photoluminescence spectra
    Meftah, A
    Oueslati, M
    SOLID STATE COMMUNICATIONS, 1997, 101 (01) : 27 - 31
  • [3] PHOTOLUMINESCENCE SPECTRA OF N + , Zn + IMPLANTED GaAs1 - xPx AT 1. 8-4. 2K.
    Xu, Jun-ying
    Chen, Liang-hui
    Gong, Ji-shu
    Xu, Zhong-ying
    Li, Yu-zhang
    Zhuang, Wei-hua
    Xu, Jing-zong
    Wu, Ling-xu
    Journal of Luminescence, 1984, 31-32 (pt 1 - 2) : 454 - 456
  • [4] SPONTANEOUS AND STIMULATED CARRIER LIFETIMES (77 DEGREES K) IN GAAS1-XPX AND GAAS1-XPX - N
    LEE, MH
    HOLONYAK, N
    CAMPBELL, JC
    GROVES, WO
    CRAFORD, MG
    KEUNE, DL
    APPLIED PHYSICS LETTERS, 1974, 24 (07) : 310 - 313
  • [5] RECOMBINATION PROCESSES INVOLVING ZN AND N IN GAAS1-XPX
    CAMPBELL, JC
    HOLONYAK, N
    LEE, MH
    KUNZ, AB
    PHYSICAL REVIEW B, 1974, 10 (04): : 1755 - 1757
  • [6] ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36)
    MAKITA, Y
    GONDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 565 - 566
  • [7] LIFETIME SPECTRA (77 DEGREES K) OF NITROGEN-DOPED GAAS1-XPX
    LEE, MH
    HOLONYAK, N
    NELSON, RJ
    KEUNE, DL
    GROVES, WO
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1290 - 1298
  • [8] ON THE EFFECT OF AN SI3N4 BARRIER LAYER OVER GAAS1-XPX DURING ZN DIFFUSION - A PHOTOLUMINESCENCE ANALYSIS
    VIGIL, E
    ZEHE, A
    GRACIA, M
    MARTINEZ, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (08) : 1043 - 1051
  • [9] PHOTOLUMINESCENCE SPECTRA OF PARA TYPE GAAS1-XPX SOLID-SOLUTIONS IN DIRECT AND INDIRECT COMPOSITION REGIONS
    ALFEROV, ZI
    ZHILYAEV, YV
    KOPEV, PS
    GARBUZOV, DZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 589 - &