PROPERTIES OF A 2D HOLE GAS AT A SILICON SURFACE IN ULTRASTRONG MAGNETIC-FIELDS

被引：0

作者：

GUSEV, GM ^{[1
]}

KVON, ZD ^{[1
]}

NEIZVESTNYI, IG ^{[1
]}

OVSYUK, VN ^{[1
]}

CHEREMNYKH, PA ^{[1
]}

机构：

[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR

来源：

JETP LETTERS | 1984年 / 39卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：541 / 543

页数：3

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