PROPERTIES OF A 2D HOLE GAS AT A SILICON SURFACE IN ULTRASTRONG MAGNETIC-FIELDS

被引：0
|
作者：
GUSEV, GM [1 ]
KVON, ZD [1 ]
NEIZVESTNYI, IG [1 ]
OVSYUK, VN [1 ]
CHEREMNYKH, PA [1 ]
机构：
[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR
来源：
JETP LETTERS | 1984年 / 39卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：541 / 543
页数：3
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