GAAS1-XPX INJECTION LASERS

被引：0

作者：

PANKOVE, JI

NELSON, H

TIETJEN, JJ

HEGYI, IJ

MARUSKA, HP

机构：

来源：

RCA REVIEW | 1967年 / 28卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：560 / &

共 50 条

[31] IMPROVED PERFORMANCE OF GAAS1-XPX LASER DIODES
TIETJEN, JJ
OCHS, SA
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 180 - &
[32] PROPERTIES OF N ISOELECTRONIC TRAP IN GAAS1-XPX
WOLFORD, DJ
STREETMAN, BG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (01): : 41 - 41
[33] CONDITIONS FOR UNIFORM GROWTH OF GAAS1-XPX SUPERLATTICES
BLAKESLEE, AE
KIBBLER, A
WANLASS, MW
BIEFELD, RM
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1206 - 1208
[34] ORGANOMETALLIC EPITAXIAL-GROWTH OF GAAS1-XPX
SAMUELSON, L
OMLING, P
TITZE, H
GRIMMEISS, HG
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 323 - 338
[35] GaAs1-xPx光敏器件的试制
薛承永
陆瑞良
传感器技术, 1987, (Z1) : 30 - 30
[36] SCATTERING OF ELECTRONS IN GAAS1-XPX SOLID SOLUTIONS
YUROVA, ES
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 324 - &
[37] STUDIES OF PHOTOLUMINESCENCE IN GAAS1-XPX MIXED CRYSTALS
GAJ, JA
MAJERFELD, A
PEARSON, GL
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02): : 513 - +
[38] DISLOCATIONS AND THEIR EFFECT ON PHOTOLUMINESCENCE EFFICIENCY IN GAAS1-XPX
STRINGFE.GB
GREENE, PE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 687 - &
[39] THERMODYNAMIC CALCULATIONS FOR GAAS1-XPX VAPOR GROWTH
BLEICHER, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 613 - &
[40] CHARACTERISTICS OF THERMAL OXIDES GROWN ON GAAS1-XPX
KUHLMANN, GJ
PANCHOLY, RK
PHILLIPS, DH
THIN SOLID FILMS, 1979, 56 (1-2) : 129 - 142