DIAMOND DEPOSITION FROM FLUORINATED PRECURSORS USING MICROWAVE-PLASMA CHEMICAL-VAPOR-DEPOSITION

被引：25

作者：

FOX, CA ^{[1
]}

MCMASTER, MC ^{[1
]}

HSU, WL ^{[1
]}

KELLY, MA ^{[1
]}

HAGSTROM, SB ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond thin films were grown using fluorinated precursors by microwave plasma-assisted chemical vapor deposition. Using CH4/H-2, CH3F/H-2, and CF4/H-2 gas mixtures, films were, grown at surface temperatures in the range 600-900 degrees C at constant microwave power, carbon mole fraction, and pressure. Growth activation energies for the CH4/H-2, CH3F/H-2, and CF4/H-2 mixtures were 12.6+/-1.8, 13.7+/-1.2, and 12.4+/-1.1 kcal/mole, respectively. Argon ion etching in conjunction with x-ray photoelectron spectroscopy indicated negligible fluorine incorporation into the films. These results are consistent with the hypothesis that diamond is grown from the same intermediates, namely methyl radicals and atomic hydrogen, for all of these mixtures. (C) 1995 American Institute of Physics.

引用

页码：2379 / 2381

页数：3

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