HIGH-SPEED INP/INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH SUPPRESSED COLLECTOR CURRENT BLOCKING

被引：22
|
作者：
KURISHIMA, K
NAKAJIMA, H
KOBAYASHI, T
MATSUOKA, Y
ISHIBASHI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期
关键词：
D O I：
10.1063/1.109368
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InP/InGaAs double-heterostructure bipolar transistors (DHBTs), incorporating a new collector structure featuring ''pn pair doping'' in the heterointerface vicinity, have been fabricated using a low-pressure metalorganic chemical vapor deposition (MOCVD) method. These transistors provide high collector current densities over 1 X 10(5) A/cm2, indicating the successful suppression of current blocking. S-parameter measurements determine the high current gain cutoff frequencies of 130 GHz. These values favorably compare with those of conventional InGaAs-collector HBTs fabricated for comparison, suggesting that the InP collectors have excellent electron transport properties.
引用
收藏
页码：2372 / 2374
页数：3
相关论文
共 50 条
  • [31] INFLUENCE OF LAUNCHING ENERGY ON COLLECTOR TRANSPORT IN INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    KURISHIMA, K
    KOBAYASHI, T
    MATSUOKA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2121 - 2122
  • [32] Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors
    Nakajima, H
    Kurishima, KJ
    Yamahata, SJ
    Kobayashi, T
    Matsuoka, Y
    SOLID-STATE ELECTRONICS, 1996, 39 (04) : 439 - 444
  • [33] HIGH-SPEED CARBON-DOPED-BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
    ITO, H
    YAMAHATA, S
    SHIGEKAWA, N
    KURISHIMA, K
    MATSUOKA, Y
    ELECTRONICS LETTERS, 1995, 31 (24) : 2128 - 2130
  • [34] INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI
    MAKIMOTO, T
    KURISHIMA, K
    KOBAYASHI, T
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3815 - 3817
  • [35] 20 Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors
    NTT System Electronics Lab, Atsugi, Japan
    Electron Lett, 2 (159-160):
  • [36] High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
    Nottenburg, Richard N.
    Chen, Young-Kai
    Panish, Morton B.
    Hamm, R.
    Humphrey, D.A.
    Electron device letters, 1988, 9 (10): : 524 - 526
  • [37] HIGH-SPEED PERFORMANCE OF INP/IN0.53GA0.47AS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    WON, T
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1988, 52 (07) : 552 - 554
  • [38] Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
    Xie, Junling
    Cheng, Wei
    Wang, Yuan
    Niu, Bin
    Chang, Long
    Chen, Tangsheng
    2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 366 - 368
  • [39] ELECTRON-TRANSPORT MECHANISMS IN ABRUPT-BASE AND GRADED-BASE/COLLECTOR ALINAS/GAINAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    DELOSSANTOS, HJ
    HAFIZI, M
    LIU, T
    RENSCH, DB
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 645 - 650
  • [40] COLLECTOR-EMITTER OFFSET VOLTAGE IN INP INGAAS SINGLE AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    OUACHA, A
    WILLANDER, M
    HAMMARLUND, B
    LOGAN, RA
    SOLID-STATE ELECTRONICS, 1994, 37 (01) : 201 - 203
12345