CATION DEPENDENCE OF THE ELECTRONIC-STRUCTURE OF ALAS AND GAAS

被引：0
|
作者：
CORKILL, JL
RUBIO, A
COHEN, ML
机构：
[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
[2] LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA 94720 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 25卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0921-5107(94)90205-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of the cation potential on the electronic structure of AlAs and GaAs are studied using the ab initio pseudo-potential method. Differences between the band gaps and one-electron levels of AlAs and GaAs are explained in terms of the s, p and d angular components of the Al and Ga potentials. Substituting the s- and d-channels of Ga for the corresponding channels in the Al potential reduces the AlAs direct gap by 0.7 and 0.5 eV, respectively. A reduction in the ionicity of GaAs compared to AlAs is mostly due to the stronger Ga-s potential. Comparisons are made to a previous analysis of cation effects in the III-V nitrides.
引用
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页码：79 / 84
页数：6
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