ELECTRICAL-PROPERTIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITED GAAS EPITAXIAL LAYERS - TEMPERATURE-DEPENDENCE

被引：36

作者：

REEP, DH ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115386

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2697 / 2702

页数：6

共 50 条

[1] TEMPERATURE-DEPENDENCE OF STRESSES IN CHEMICAL VAPOR-DEPOSITED VITREOUS FILMS
SHINTANI, A
SUGAKI, S
NAKASHIMA, H
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4197 - 4205
[2] PHOTOLUMINESCENCE AND ELECTRICAL-PROPERTIES OF CLOSE SPACE VAPOR TRANSPORT GAAS EPITAXIAL LAYERS
MIMILAARROYO, J
LEGROS, R
BOURGOIN, JC
CHAVEZ, F
JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3652 - 3654
[3] Temperature dependence of the properties of vapor-deposited polyimide
Tsai, FY
Blanton, TN
Harding, DR
Chen, SH
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3760 - 3764
[4] Temperature dependence of the properties of vapor-deposited polyimide
Harding, D.R. (fengtsai@yahoo.com), 1600, American Institute of Physics Inc. (93):
[5] TEMPERATURE-DEPENDENCE OF ELECTRICAL-PROPERTIES IN BEIMPLANTED SEMI-INSULATING GAAS
HUTCHBY, JA
VAIDYANATHAN, KV
JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2559 - 2564
[6] CHARACTERIZATION AND ELECTRICAL-PROPERTIES OF CHEMICAL VAPOR-DEPOSITED FERROELECTRIC LEAD TITANATE FILMS ON TITANIUM
YOON, SG
KIM, HG
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1990, 37 (05) : 333 - 338
[7] ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS
HARPER, RE
JOHNSTON, C
BLAMIRES, NG
CHALKER, PR
BUCKLEYGOLDER, IM
SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3): : 344 - 355
[8] FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE
GOUSKOV, L
BILAC, S
PIMENTEL, J
GOUSKOV, A
SOLID-STATE ELECTRONICS, 1977, 20 (08) : 653 - 656
[9] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
GHANDHI, SK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680
[10] TEMPERATURE-DEPENDENCE OF ELECTRICAL-PROPERTIES IN SI-IMPLANTED SEMI-INSULATING GAAS
SHIGETOMI, S
MATSUMORI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02): : 243 - 244

← 1 2 3 4 5 →