UNIFORMITY CHARACTERIZATION OF SI-GAAS BY CATHODOLUMINESCENCE AND SCANNING ELECTRON ACOUSTIC MICROSCOPY

被引：0

作者：

MENDEZ, B

PIQUERAS, J

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The capabilities of SEAM in uniformity assessment of SI GaAs are investigated. Profiles of SEAM signals across the wafer and SEAM images of dislocation distribution are obtained. Part of the nonlinear signal shows a profile that is not related to dislocation distribution.

引用

页码：789 / 794

页数：6

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