DEEP-LEVEL TRANSIENT SPECTROSCOPY OF HIGH-ENERGY HEAVY-ION IRRADIATION-INDUCED DEFECTS IN N-TYPE GERMANIUM

被引：14
|
作者：
MARIE, P
LEVALOIS, M
BOGDANSKI, P
机构：
[1] Laboratoire d'Etudes et de Recherches Sur Les Materiaux, URA No. 1317, ISMRa, 14050 CAEN Cedex
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期
关键词：
D O I：
10.1063/1.354879
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Swift heavy ion irradiation-induced defects have been studied in n-type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at E(c)-0.22, E(c)-0.275, E(c)-0.29, E(c)-0.32, and E(c)-0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200-degrees-C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.
引用
收藏
页码：868 / 871
页数：4
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