共 50 条
- [21] SWITCHING PROPERTIES OF VACUUM-DEPOSITED P-GE-N-GAAS HETEROJUNCTIONS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 29 (02): : K175 - K176
- [22] ELECTRIC-FIELDS AND VALENCE-BAND OFFSETS IN N + N [001] AND [110] ZNSE/GAAS, GAAS/GE, AND ZNSE/GE SUPERLATTICES PHYSICAL REVIEW B, 1989, 40 (15): : 10402 - 10406
- [23] GE DIFFUSION AT GE/GAAS HETEROJUNCTIONS JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2703 - 2707
- [27] BAND BENDINGS, BAND OFFSETS, AND INTERFACE INSTABILITIES IN P+-GAAS/N--ZNSE HETEROJUNCTIONS PHYSICAL REVIEW B, 1989, 39 (17): : 12743 - 12750
- [29] CAPACITANCE OF DOUBLE SATURATION N GE-N SI HETEROJUNCTIONS PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2109 - &