Radiation damage in Si detectors and front-end electronics

被引：3
|
作者：
Dabrowski, W
机构：
来源：
NUCLEAR PHYSICS B | 1995年
关键词：
D O I：
10.1016/0920-5632(95)00570-6
中图分类号：
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号：
摘要：
The present status of radiation damage studies concerning silicon detectors and front-end electronics is reviewed. For detectors the bulk displacement damages and surface related effects caused by ionising radiation are discussed. An overview of rad-hard technologies available for particle physics community is given and the basic physical phenomena responsible for radiation damage are discussed.
引用
收藏
页码：463 / 467
页数：5
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