DEEP PHOTOLUMINESCENCE IN SI/SI1-XGEX/SI QUANTUM-WELLS CREATED BY ION-IMPLANTATION AND ANNEALING

被引：27
|
作者：
STURM, JC [1 ]
STAMOUR, A [1 ]
LACROIX, Y [1 ]
THEWALT, MLW [1 ]
机构：
[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY VSA 1S6,BC,CANADA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期
关键词：
D O I：
10.1063/1.111647
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strong broad photoluminescence similar to that observed in some materials grown by molecular beam epitaxy (MBE) has been observed in Si/Si1-xGex/Si quantum wells grown by chemical vapor deposition. As grown, the samples exhibited SiGe band-edge phonon-resolved bound-exciton luminescence, but after being self-implanted with silicon and annealed at 600-degrees-C, a deep broad luminescence band 80-100 meV below the excitonic gap was observed. This strong luminescence disappeared with an 800-degrees-C anneal and had a pump power and temperature dependence similar to that observed in MBE samples. This is the first time that such luminescence has been observed in material other than that grown by MBE.
引用
收藏
页码：2291 / 2293
页数：3
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