OPTICAL INVESTIGATION OF STRESS IN CENTRAL GAAS LAYER OF MOLECULAR-BEAM-GROWN ALXGA1-XAS-GAAS-ALXGA1-XAS STRUCTURES

被引：18
|
作者：
DINGLE, R [1 ]
WIEGMANN, W [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 10期
关键词：
D O I：
10.1063/1.321453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4312 / 4315
页数：4
相关论文
共 50 条
  • [41] PHONONS IN GAAS-ALXGA1-XAS SUPERLATTICES
    MENENDEZ, J
    JOURNAL OF LUMINESCENCE, 1989, 44 (4-6) : 285 - 314
  • [42] THE DX CENTER IN GAAS AND ALXGA1-XAS
    THEIS, TN
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 307 - 314
  • [43] THE DX CENTER IN GAAS AND ALXGA1-XAS
    THEIS, TN
    SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 307 - 314
  • [44] PHOTOCONDUCTIVITY ON GAAS-ALXGA1-XAS HETEROSTRUCTURES
    STEIN, D
    EBERT, G
    VONKLITZING, K
    WEIMANN, G
    SURFACE SCIENCE, 1984, 142 (1-3) : 406 - 411
  • [45] Structural and defect characterization of GaAs and AlxGa1-xAs grown at low temperature by molecular beam epitaxy
    Fleischer, S
    Beling, CD
    Fung, S
    Nieveen, WR
    Squire, JE
    Zheng, JQ
    Missous, M
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 190 - 198
  • [46] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    HOLONYAK, N
    DRUMMOND, TJ
    CAMRAS, MD
    FISCHER, R
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
  • [47] Photoreflectance spectroscopy of molecular beam epitaxy grown AlxGa1-xAs/GaAs modulation doped heterostructure
    Srinivasan, T
    Muralidharan, R
    Jain, RK
    Mokerov, VG
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 373 - 376
  • [48] CARRIER CONFINEMENT AND OPTICAL-PROPERTIES OF ULTRATHIN, MOLECULAR-BEAM GROWN ALXGA1-XAS-GAAS HETEROSTRUCTURES
    DINGLE, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C263 - C263
  • [49] HIGH-PURITY GAAS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    FURUHATA, N
    OKAMOTO, A
    HOSHINO, H
    JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) : 814 - 818
  • [50] PHOTOSENSITIVITY SPECTRA OF GAAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
    POLYAKOV, VI
    PEROV, PI
    ERMAKOV, MG
    ERMAKOVA, ON
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1007 - 1011
12345