OPTICAL INVESTIGATION OF STRESS IN CENTRAL GAAS LAYER OF MOLECULAR-BEAM-GROWN ALXGA1-XAS-GAAS-ALXGA1-XAS STRUCTURES

被引：18

作者：

DINGLE, R ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.321453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4312 / 4315

页数：4

共 50 条

[1] DIFFUSION ACROSS MOLECULAR-BEAM-GROWN GAAS-ALXGA1-XAS INTERFACE
DINGLE, R
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1006 - 1006
[2] QUANTUM STATES OF CONFINED PARTICLES IN VERY THIN, MOLECULAR-BEAM GROWN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (09) : 791 - 792
[3] INVESTIGATION OF MOCVD GROWTH OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/GAAS/ALXGA1-XAS/GAAS MULTILAYER STRUCTURES WITH HIGH AL CONTENT
GAO, HK
YUN, F
ZHANG, JK
HOU, X
GONG, P
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 428 - 433
[4] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES
REINHART, FK
LOGAN, RA
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175
[5] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[6] DEPENDENCE OF RESONANT TUNNELING CURRENT ON AL MOLE FRACTIONS IN ALXGA1-XAS-GAAS-ALXGA1-XAS DOUBLE BARRIER STRUCTURES
TSUCHIYA, M
SAKAKI, H
APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1503 - 1505
[7] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
[8] MOLECULAR-BEAM EPITAXY OF MULTILAYER STRUCTURES WITH GAAS AND ALXGA1-XAS
JOYCE, BA
FOXON, CT
PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 143 - 153
[9] INVESTIGATION OF OPTICAL AMPLIFICATION IN GAAS-ALXGA1-XAS SUPERLATTICES
BALTRAMEYUNAS, R
WEINERT, H
GERAZIMAS, E
KUOKSHTIS, E
HENNEBERG, F
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 498 - 500
[10] Looking for the maximum low-temperature conductivity in selectively doped AlxGa1-xAs-GaAs-AlxGa1-xAs double heterojunctions
Simserides, CD
Triberis, GP
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (30) : L421 - L426

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