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CATALYTIC CHEMICAL VAPOR-DEPOSITION (CTL-CVD) METHOD PRODUCING HIGH-QUALITY HYDROGENATED AMORPHOUS-SILICON
被引:131
|
作者
:
MATSUMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Hiroshima Univ, Hiroshima, Jpn, Hiroshima Univ, Hiroshima, Jpn
MATSUMURA, H
机构
:
[1]
Hiroshima Univ, Hiroshima, Jpn, Hiroshima Univ, Hiroshima, Jpn
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1986年
/ 25卷
/ 12期
关键词
:
DEPOSITION GAS - HEATER-CATALYZER - PHOTOSENSITIVITY;
D O I
:
10.1143/JJAP.25.L949
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L949 / L951
页数:3
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