DEEP-LEVEL WAVE-FUNCTIONS INCLUDING LATTICE-RELAXATION EFFECTS

被引：7

作者：

LI, WG ^{[1
]}

MYLES, CW ^{[1
]}

机构：

[1] TEXAS TECH UNIV,DEPT PHYS & ENGN PHYS,LUBBOCK,TX 79409

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tight-binding formalism for calculating the wave functions associated with deep levels in semiconductors, including lattice relaxation effects, is presented. This formalism is an extension of the theory of Ren et al. [Phys. Rev. B 26, 951 (1982)] to include lattice relaxation. It combines a Green's-function method for computing the wave function with the results of a previously discussed molecular-dynamics technique for calculating the relaxation around an impurity. The results of applying this scheme to substitutional impurities in Si, GaP, and GaAs are presented and compared with experiment.

引用

页码：4281 / 4289

页数：9

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