EFFECTS OF NONUNIFORM WELL WIDTH ON COMPRESSIVELY STRAINED MULTIPLE QUANTUM-WELL LASERS

被引:11
|
作者
TENG, D
LO, YH
LIN, CH
EASTMAN, LF
机构
[1] Cornell University, Phillips Hall, Ithaca
关键词
D O I
10.1063/1.106858
中图分类号
O59 [应用物理学];
学科分类号
摘要
We theoretically investigate the effects of nonuniform well widths on compressively strained In0.2Ga0.8As/GaAs multiple quantum well lasers using multiband effective mass theory and density matrix formalism. We find that the well width fluctuations do not degrade the transparency current, differential gain, and linewidth broadening factor. Besides, lasers with intentionally designed chirped well width have much broader gain profiles compared to uniform well lasers. This feature is attractive for applications requiring large gain bandwidth such as tunable lasers, mode-locked lasers, and wavelength division multiplexed laser arrays.
引用
收藏
页码:2729 / 2731
页数:3
相关论文
共 50 条
  • [31] FACET OXIDATION OF INGAAS/GAAS STRAINED QUANTUM-WELL LASERS
    OKAYASU, M
    FUKUDA, M
    TAKESHITA, T
    UEHARA, S
    KURUMADA, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8346 - 8351
  • [32] Strained-layer InGaAs quantum-well heterostructure lasers
    Coleman, JJ
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) : 1008 - 1013
  • [33] Amplified spontaneous emission spectroscopy in strained quantum-well lasers
    Chang, CS
    Chuang, SL
    Minch, JR
    Fang, WCW
    Chen, YK
    TanbunEk, T
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) : 1100 - 1107
  • [34] Antimonide-based strained quantum-well diode lasers
    Massachusetts Inst of Technology, Lexington, United States
    Phys Scr T, (17-25):
  • [35] Antimonide-based strained quantum-well diode lasers
    Choi, HK
    Turner, GW
    PHYSICA SCRIPTA, 1997, T69 : 17 - 25
  • [36] DIFFERENTIAL GAIN IN INP-BASED STRAINED LAYER MULTIPLE QUANTUM-WELL LASERS
    NICHOLS, D
    BHATTACHARYA, P
    APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2129 - 2131
  • [37] Compressively strained p-type InGaAs/AlGaAs quantum-well infrared photodetectors
    Zhang, DH
    Shi, W
    Li, N
    Chu, JH
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6287 - 6290
  • [38] WELL WIDTH DEPENDENCE OF GAIN AND THRESHOLD CURRENT IN GAALAS SINGLE QUANTUM-WELL LASERS
    SAINTCRICQ, B
    LOZESDUPUY, F
    VASSILIEFF, G
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (05) : 625 - 630
  • [39] Analysis of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers
    Durga Prasad Sapkota
    Madhu Sudan Kayastha
    Koichi Wakita
    Optical and Quantum Electronics, 2013, 45 : 35 - 43
  • [40] Comparision of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers
    Sapkota, Durga Prasad
    Kayastha, Madhu Sudan
    Wakita, Koichi
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XX, 2012, 8255