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- [23] ROLE OF THE DISLOCATION-POINT DEFECT-DOPANT INTERACTION IN THE RECOMBINATION PROCESSES IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 966 - 967
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- [25] IDENTIFICATION OF A TRIGONAL CATION ANTISITE DEFECT IN GALLIUM-ARSENIDE PHYSICAL REVIEW B, 1989, 39 (03): : 1973 - 1976
- [26] PHOTOCAPACITANCE STUDY OF DEFECT CENTER STRUCTURE IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 28 - 31
- [29] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 249 - 252