MOVPE GROWTH OF SELECTIVELY DOPED ALGAAS GAAS HETEROSTRUCTURES WITH TERTIARYBUTYLARSINE

被引:13
|
作者
TANAKA, H
KIKKAWA, T
KASAI, K
KOMENO, J
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 06期
关键词
D O I
10.1143/JJAP.28.L901
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L901 / L903
页数:3
相关论文
共 50 条
  • [31] GROWTH AND PROPERTIES OF ALGAAS/GAAS HETEROSTRUCTURES ON GAAS (110) SURFACE
    ZHOU, JM
    HUANG, Y
    LI, YK
    JIA, WY
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 221 - 223
  • [32] MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures
    Mendez-Garcia, V. H.
    Gonzalez-Fernandez, J. V.
    Espinosa-Vega, L. I.
    Diaz, T.
    Romano, R.
    Rosendo, E.
    Gallardo, S.
    Vazquez-Cortes, D.
    Shimomura, S.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 88 - 91
  • [34] LARGE-SCALE MOVPE GROWTH OF GAAS AND ALGAAS LAYERS
    GERSTEN, SW
    VENDURA, GJ
    YEH, YCM
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 286 - 292
  • [35] Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow
    E. I. Lonskaya
    O. A. Ryabushkin
    Journal of Experimental and Theoretical Physics Letters, 2005, 82 : 664 - 668
  • [36] Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow
    Lonskaya, EI
    Ryabushkin, OA
    JETP LETTERS, 2005, 82 (10) : 664 - 668
  • [37] Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures
    Pozela, J
    Juciene, V
    Namajunas, A
    Pozela, K
    Mokerov, VG
    Fedorov, YV
    Kaminskii, VE
    Hook, AV
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) : 5564 - 5567
  • [38] A novel selectively δ-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure
    Bouzaïene, L
    Sfaxi, L
    Sghaeïr, H
    Maaref, H
    Cavanna, A
    Jouault, B
    Contreras, S
    Konczewicz, L
    OPTICAL MATERIALS, 2001, 17 (1-2) : 299 - 303
  • [39] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
    CHEN, CH
    LARSEN, CA
    STRINGFELLOW, GB
    APPLIED PHYSICS LETTERS, 1987, 50 (04) : 218 - 220
  • [40] MOVPE GROWTH OF HIGHLY ZINC-DOPED BASES FOR GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    TANAKA, S
    OHKUBO, M
    IRIKAWA, M
    KIKUTA, T
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 898 - 902