ANDERSON TRANSITION IN THE EXCITON-IMPURITY BAND IN SILICON

被引：0
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作者：
ALTUKHOV, PD
IVANOV, AV
ROGACHEV, AA
机构：
来源：
JETP LETTERS | 1982年 / 36卷 / 09期
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暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：401 / 404
页数：4
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