ANDERSON TRANSITION IN THE EXCITON-IMPURITY BAND IN SILICON

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作者：

ALTUKHOV, PD

IVANOV, AV

ROGACHEV, AA

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来源：

JETP LETTERS | 1982年 / 36卷 / 09期

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O4 [物理学];

学科分类号：

0702 ;

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页码：401 / 404

页数：4

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