BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE

被引:406
作者
CARDONA, M
机构
关键词
D O I
10.1016/0022-3697(63)90097-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1543 / &
相关论文
共 52 条
[21]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[22]   INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].
EHRENREICH, H ;
PHILLIPS, JC ;
PHILIPP, HR .
PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&
[23]   FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE [J].
GREENAWAY, DL .
PHYSICAL REVIEW LETTERS, 1962, 9 (03) :97-&
[24]  
GREENAWAY DL, 1962, JUL P INT C PHYS SEM, P666
[25]   BAND STRUCTURE OF GRAY TIN [J].
GROVES, S ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1963, 11 (05) :194-&
[26]   BAND STRUCTURE OF HGSE AND HGSE-HGTE ALLOYS [J].
HARMAN, TC ;
STRAUSS, AJ .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2265-&
[27]  
Herman F., 1955, J ELECT CONTROL, V1, P103
[29]   INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .2. ABSORPTION IN P-TYPE MATERIAL [J].
HODBY, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526) :324-&
[30]   FINE STRUCTURE AND MAGNETO-OPTIC EFFECTS IN EXCITON SPECTRUM OF CADMIUM SULFIDE [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1961, 122 (01) :35-&