RBS CHANNELING STUDY OF THE CRYSTALLOGRAPHIC CORRELATION FOR EPITAXIAL CEO2 ON SI

Epitaxially grown CeO2 layers on (100) Si substrates are analyzed using the Rutherford backscattering spectrometry combined with the channeling technique. By construction of stereographic projections for CeO2 layers and Si substrates from channeling dip patterns, the correlations between overgrown layers and substrates are clearly revealed: CeO2 layers on (100) Si substrates have the (110) orientation. It has also been revealed that CeO2 has a double domain structure: [001] CeO2 parallel-to [011BAR] Si and [110BAR] CeO2 parallel-to [011BAR] Si, whereas planes of (110) in CeO2 and (100) in Si are parallel in both configurations. It is reported that in this system the (110) epitaxial orientation is not exactly parallel to the (100) orientations in Si.