DIRECT IMAGING OF SI INCORPORATION IN GAAS MASKLESSLY GROWN ON PATTERNED SI SUBSTRATES

被引：16

作者：

GRUNDMANN, M ^{[1
]}

CHRISTEN, J ^{[1
]}

BIMBERG, D ^{[1
]}

HASHIMOTO, A ^{[1
]}

FUKUNAGA, T ^{[1
]}

WATANABE, N ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,RES LAB,HACHIOJI,TOKYO 193,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.105020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral variation of the emission energy of GaAs masklessly grown on V-grooved Si is imaged with cathodoluminescence wavelength imaging. This newly developed unique experimental approach allows, for the first time, to directly visualize and quantify the extreme homogeneity of this novel growth mode and the lateral variation of Si impurity incorporation in such semiconductor microstructures. It represents an essential characterization tool for micropatterned optoelectronic monolithic integrated circuits.

引用

页码：2090 / 2092

页数：3

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