PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON

被引：63

|

作者：

DENDA, S

NICOLET, MA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.1708829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2412 / &

相关论文

共 50 条

[41] THE RELATIONSHIP BETWEEN SPACE-CHARGE-LIMITED CURRENT AND DENSITY OF STATES IN AMORPHOUS-SILICON
ORTON, JW
POWELL, MJ
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (01): : 11 - 21
[42] EFFECT OF INHOMOGENEITIES IN AN INSULATOR ON SPACE-CHARGE-LIMITED CURRENT
GILDENBLAT, GS
KARACHENTSEV, AY
POTASHEV, YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 641 - 642
[43] SPACE-CHARGE-LIMITED CURRENT IN THIN PLZT SAMPLES
SIMHONY, M
FERROELECTRICS, 1983, 50 (1-4) : 437 - 442
[44] SLOW DECAY OF SPACE-CHARGE-LIMITED CURRENT IN CDS
WANG, YC
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 332 - 336
[45] SPACE-CHARGE-LIMITED CURRENT ENHANCED BY FRENKEL EFFECT
BARBE, DF
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (11) : 1812 - &
[46] A NOTE ON THE ANALYSIS OF SPACE-CHARGE-LIMITED CURRENT DATA
JARMAN, RH
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1210 - 1211
[47] Space-charge-limited current in hydrogenated amorphous carbon films containing silicon and oxygen
Bozhko, A
Shupegin, M
Takagi, T
DIAMOND AND RELATED MATERIALS, 2002, 11 (10) : 1753 - 1759
[48] OBSERVATION OF DEFECT ANNEALING IN NEUTRON-IRRADIATED SILICON BY SPACE-CHARGE-LIMITED CURRENT
MAGEE, TJ
HERMANN, AM
DECK, RJ
PHYSICAL REVIEW B, 1972, 5 (08): : 3364 - &
[49] ELECTRON MOBILITY AND SPACE-CHARGE-LIMITED CURRENT FLOW IN NA-DOPED ZNO
JAKUBOWSKI, W
WHITMORE, DH
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1971, 54 (03) : 161 - +
[50] INFLUENCE OF CHARGE EXCHANGE IN IMPURITY CENTERS ON SPACE-CHARGE-LIMITED CURRENT
PARITSKII, LG
ROZENTAL, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 210 - +

← 1 2 3 4 5 →