INFLUENCE OF THERMAL ANNEALING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF NICKEL OXIDE THIN FILMS

被引：0

作者：

Reddy, A. Mallikarjuna ^{[1
]}

Reddy, Ch. Seshendra ^{[1
]}

Reddy, A. Sivasankar ^{[2
]}

Reddy, P. Sreedhara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Prades, India

[2] Kongju Natl Univ, Div Adv Mat Sci & Engn, Kong Ju 182, South Korea

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2011年 / 3卷 / 01期

关键词：

SPUTTERING; STRUCTURAL PROPERTIES; ELECTRICAL PROPERTIES; ANNEALING TEMPERATURE;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nickel oxide (NiO) is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200) preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 cm was observed after annealing.

引用

页码：225 / 231

页数：7

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