INFLUENCE OF THERMAL ANNEALING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF NICKEL OXIDE THIN FILMS

被引：0

作者：

Reddy, A. Mallikarjuna ^{[1
]}

Reddy, Ch. Seshendra ^{[1
]}

Reddy, A. Sivasankar ^{[2
]}

Reddy, P. Sreedhara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Prades, India

[2] Kongju Natl Univ, Div Adv Mat Sci & Engn, Kong Ju 182, South Korea

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2011年 / 3卷 / 01期

关键词：

SPUTTERING; STRUCTURAL PROPERTIES; ELECTRICAL PROPERTIES; ANNEALING TEMPERATURE;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nickel oxide (NiO) is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200) preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 cm was observed after annealing.

引用

页码：225 / 231

页数：7

共 50 条

[11] Modifications of structural and optical properties of copper oxide thin films by thermal annealing
Han, In-Sub
Park, Ji-Soo
Park, Il-Kyu
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2019, 20 (06): : 660 - 664
[12] Effect of annealing on structural, optical and electrical properties of nickel oxide thin films synthesized by the reactive radio frequency sputtering
Elmassi, S.
Narjis, A.
Nkhaili, L.
Elkissani, A.
Amiri, L.
Drissi, S.
Abali, A.
Bousseta, M.
Outzourhit, A.
PHYSICA B-CONDENSED MATTER, 2022, 639
[13] Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films
M. Devika
N. Koteeswara Reddy
S. Venkatramana Reddy
K. Ramesh
K. R. Gunasekhar
Journal of Materials Science: Materials in Electronics, 2009, 20 : 1129 - 1134
[14] Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films
Devika, M.
Reddy, N. Koteeswara
Reddy, S. Venkatramana
Ramesh, K.
Gunasekhar, K. R.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (11) : 1129 - 1134
[15] Influence of thermal annealing on structural, morphological, optical and electrical properties of NiO-Cu composite thin films
Reddy, Y. Ashok Kumar
Ajitha, B.
Reddy, P. Sreedhara
MATERIALS EXPRESS, 2014, 4 (01) : 32 - 40
[16] Effect of thermal annealing on structural and electrical properties of tio2 thin films
Nagabharana, R. M.
Kumaraswamy, G. N.
Gundanna, Susheel Kumar
Bhatta, Umananda M.
THIN SOLID FILMS, 2020, 710
[17] Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films
Chen, Yinzhi
Jiang, Hongchuan
Jiang, Shuwen
Liu, Xingzhao
Zhang, Wanli
Zhang, Qinyong
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2014, 27 (02) : 368 - 372
[18] Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films
Yinzhi Chen
Hongchuan Jiang
Shuwen Jiang
Xingzhao Liu
Wanli Zhang
Qinyong Zhang
Acta Metallurgica Sinica(English Letters), 2014, 27 (02) : 368 - 372
[19] Influence of post-deposition annealing on the electrical properties of zinc oxide thin films
Park, Hui Kyung
Jo, Jaeseung
Hong, Hee Kyeung
Heo, Jaeyeong
THIN SOLID FILMS, 2014, 573 : 22 - 26
[20] Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films
Yinzhi Chen
Hongchuan Jiang
Shuwen Jiang
Xingzhao Liu
Wanli Zhang
Qinyong Zhang
Acta Metallurgica Sinica (English Letters), 2014, 27 : 368 - 372

← 1 2 3 4 5 →