NEW MECHANISM OF HOT-CARRIER GENERATION IN VERY SHORT-CHANNEL MOSFETS

被引：29
|
作者：
CHILDS, PA
LEUNG, CCC
机构：
[1] School of Electronic and Electrical Engineering, University of Birmingham, Birmingham
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 02期
关键词：
MOSFETS; HOT CARRIERS;
D O I：
10.1049/el:19950091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results are presented which suggest that as device dimensions are scaled down, hot carrier reliability problems may re-emerge despite reductions in supply voltage. This conclusion is drawn from theoretical results which show an increasingly important role played by electron-electron interactions as device dimensions are reduced.
引用
收藏
页码：139 / 141
页数：3
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