INTERFACIAL REACTION OF AG/TI THIN-FILMS ON A SILICA SUBSTRATE

Double and triple layer films of Ag-Ti system were deposited on silica (fused quartz) substrates and annealed at 800 K for 1 h under vacuum (10(-4) Pa). Atomic interaction between the film and the substrate due to the annealing was observed using Auger electron spectroscopy. The annealing segregates Ti atoms both at the film surface and the interface between metallic film and silica substrate. Directly deposited Ti atoms on silica decomposed SiO2 bonds without annealing but Ti atoms segregating at the interface did not. The behaviour of titanium can be explained in terms of the affinity for oxygen. This was suggested by the change in the peak height ratio of Ti-L23M23M45/Ti-L23M23M23 related to the valence Auger transition.