REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS

被引：27

作者：

BERGSTRESSER, TK

COHEN, ML

WILLIAMS, EW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1965年 / 15卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.15.662

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：662 / +

页数：1

共 10 条

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[4]

COHEN MH, TO BE PUBLISHED

[5] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J].

COHEN, ML ;

PHILLIPS, JC .

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[6] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].

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PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&

[7] FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE [J].

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PHYSICAL REVIEW LETTERS, 1962, 9 (03) :97-&

[8] ENERGY-BAND INTERPOLATION SCHEME BASED ON A PSEUDOPOTENTIAL [J].

PHILLIPS, JC .

PHYSICAL REVIEW, 1958, 112 (03) :685-695

[9]

WILLIAMS EW, TO BE PUBLISHED

[10]

ZALLEN R, 1964, PHYS REV, V134, P1628

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