SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB

被引：64

作者：

COHEN, ML

PHILLIPS, JC

机构：

来源：

PHYSICAL REVIEW | 1965年 / 139卷 / 3A期

关键词：

D O I：

10.1103/PhysRev.139.A912

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A912 / &

共 20 条

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[10] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

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ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

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