CARRIER DENSITY DISTRIBUTION IN MODULATION DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES

被引：9

作者：

HSIEH, TC

HESS, K

COLEMAN, JJ

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801

[2] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90069

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 12期

关键词：

D O I：

10.1016/0038-1101(83)90145-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1173 / 1176

页数：4

共 50 条

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