GROWTH-BEHAVIOR OF SILICON-CARBIDE CRYSTALS IN A QUASIENCLOSED VOLUME

被引：0
|
作者：
IVANOV, EG
TAIROV, YM
TSVETKOV, VF
机构：
来源：
INORGANIC MATERIALS | 1985年 / 21卷 / 04期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：507 / 510
页数：4
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