Optical Properties of Indium Arsenide (InAs)

被引:0
|
作者
Akinlami, J. O. [1 ]
机构
[1] Fed Univ Agr, Dept Phys, P.M.B 2240, Abeokuta, Ogun State, Nigeria
关键词
Index of Refraction; Extinction Coefficient; Dielectric Constant; Absorption Coefficient; Reflectance; Semiconductor;
D O I
10.1166/jap.2013.1059
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the present work optical properties of Indium Arsenide (InAs) have been investigated by means of Kramers Kronig method. Optical properties such as refractive index, extinction coefficient, dielectric constant, transmittance, absorption coefficient, reflectance, reflection coefficient, and optical conductivity are presented in the energy range 1.5-6.01 eV. The calculated optical properties of InAs indicate promising device applications such as the design of optoelectronic devices, electronic and photonic devices.
引用
收藏
页码:170 / 174
页数:5
相关论文
共 50 条
  • [31] ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF INDIUM ARSENIDE AND ANTIMONIDE
    VLASOV, VA
    SEMILETO.SA
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 13 (04): : 580 - +
  • [32] PROPERTIES OF NUCLEAR-TRANSMUTATION-DOPED INDIUM ARSENIDE
    KOLIN, NG
    OSVENSKII, VB
    RYTOVA, NS
    YUROVA, ES
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 519 - 522
  • [33] INVESTIGATION OF STRUCTURE OF CONDUCTION BAND OF INDIUM ARSENIDE BY AN OPTICAL METHOD
    NESMELOVA, IM
    BARYSHEV, NS
    PYREGOV, BP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 413 - +
  • [34] Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots
    Inoue, Tomoya
    Mamizuka, Masataka
    Mizuno, Hiroshi
    Kojima, Osamu
    Kita, Takashi
    Wada, Osamu
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
  • [35] INDIUM AS A SOURCE OF IMPURITIES IN INDIUM ARSENIDE
    STRAUSS, AJ
    HARMAN, TC
    OWENS, EB
    FINN, MC
    SOLID-STATE ELECTRONICS, 1960, 1 (02) : 131 - 134
  • [36] Performance assessment of Indium Arsenide (InAs) Single and Dual Quantum-Well Heterostructure FinFETs
    Biswas, Kalyan
    Sarkar, Angsuman
    Sarkar, Chandan Kumar
    PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) 2016, 2016, : 208 - 211
  • [37] Preparing and characterization of indium arsenide (InAs) thin films by chemical spray pyrolysis (CSP) technique
    Al-Mousoi, Ali K.
    Mohammed, Mustafa K. A.
    Khalaf, Haider A.
    OPTIK, 2016, 127 (15): : 5834 - 5840
  • [38] Strain tuned thermal conductivity reduction in Indium Arsenide (InAs) - A first-principles study
    Muthaiah, Rajmohan
    Garg, Jivtesh
    COMPUTATIONAL MATERIALS SCIENCE, 2021, 196
  • [39] OPTICAL PROPERTIES OF INDIUM
    GOLOVASH.AI
    LEVCHENK.IS
    MOTULEVI.GP
    SHUBIN, AA
    SOVIET PHYSICS JETP-USSR, 1967, 24 (06): : 1093 - &
  • [40] PREPARATION OF INDIUM ARSENIDE
    HARADA, RH
    STRAUSS, AJ
    JOURNAL OF APPLIED PHYSICS, 1959, 30 (01) : 121 - 121