ETCH PITS AND DISLOCATIONS OF GA1-XALXAS LIQUID-PHASE EPITAXIAL LAYERS

被引：12

作者：

KOMIYA, S ^{[1
]}

AKITA, K ^{[1
]}

NISHITANI, Y ^{[1
]}

ISOZUMI, S ^{[1
]}

KOTANI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3367 / 3369

页数：3

共 50 条

[41] IMPURITY COMPENSATION IN GA1-XALXAS ALLOYS
SAXENA, AK
SINGH, BB
PHYSICAL REVIEW B, 1983, 28 (02): : 1132 - 1133
[42] DX CENTER IN GA1-XALXAS ALLOYS
BOURGOIN, JC
FENG, SL
VONBARDELEBEN, HJ
PHYSICAL REVIEW B, 1989, 40 (11): : 7663 - 7670
[43] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS
WANG, CC
SHIN, SH
CHU, M
LANIR, M
VANDERWYCK, AHB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179
[44] RAMAN-SCATTERING BY COUPLED PLASMON-PHONON MODES IN N-TYPE GA1-XALXAS EPITAXIAL LAYERS
KIRILLOV, D
CHAI, Y
WEBB, C
DAVIS, G
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 231 - 233
[45] A STUDY OF ALLOY SCATTERING IN GA1-XALXAS
CHANDRA, A
EASTMAN, LF
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2669 - 2677
[46] Refractive index model for Ga1-xAlxAs
Kong, Jun
Zhang, Weijun
Yang, Zhilian
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (09): : 748 - 752
[47] INVESTIGATION OF INDIUM ALLOYED GAAS AND (GA,AL)AS LIQUID-PHASE EPITAXIAL LAYERS WITH PHOTOLUMINESCENCE
DAVITO, D
ROEDEL, RJ
MELLEN, N
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 310 - 310
[48] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY
RUPPRECHT, H
WOODALL, JM
PETTIT, GD
APPLIED PHYSICS LETTERS, 1967, 11 (03) : 81 - +
[49] REFRACTIVE-INDEX OF GA1-XALXAS
AFROMOWITZ, MA
SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63
[50] LOW-LOSS OPTICAL-WAVEGUIDES IN SINGLE LAYERS OF GA1-XALXAS
JENSEN, SM
BARNOSKI, MK
HUNSPERGER, RG
KAMATH, GS
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3547 - 3548

← 1 2 3 4 5 →