BLUE-LIGHT EMITTING ZNS DIODES

被引：13

作者：

ABDELKADER, A ^{[1
]}

BRYANT, FJ ^{[1
]}

机构：

[1] UNIV HULL,DEPT PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 09期

关键词：

CATHODOLUMINESCENCE - Spectrum Analysis - ELECTROLUMINESCENCE - Spectrum Analysis - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER - Materials - SEMICONDUCTOR DIODES; LIGHT EMITTING - Materials;

D O I：

10.1007/BF00553360

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low resistivity n-type ZnS single crystals of about 10**3 OMEGA cm and 10**2 OMEGA cm were achieved by firing the as-grown high resistivity ZnS single crystals using quartz ampoules and graphite crucible, respectively. Schottky diodes fabricated from sample 1 gave stable blue emission in reverse bias while sample II gave blue emission in forward bias. The characteristics of these diodes were studied and presented. Carrier concentrations were estimated from the capacitance-voltage measurements of the two types of diodes. Electroluminescence spectra as well as cathodoluminescence spectra of both samples are presented. The blue emission peak was ascribed to the donor-acceptor pairs transition.

引用

页码：3227 / 3230

页数：4

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