GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES

被引：412
作者：
ASPNES, DE [1 ]
机构：
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
PHYSICAL REVIEW B | 1976年 / 14卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.14.5331
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5331 / 5343
页数：13
相关论文
共 75 条
[1]   ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769
[2]   LINE-SHAPE AND SYMMETRY ANALYSIS OF CORE-LEVEL ELECTROREFLECTANCE SPECTRA OF GAP [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW B, 1976, 14 (06) :2534-2538
[3]  
ASPNES DE, IN PRESS
[4]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[5]   HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].
AUKERMAN, LW ;
WILLARDSON, RK .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :939-940
[6]   TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
AUVERGNE, D ;
CAMASSEL, J ;
MATHIEU, H ;
CARDONA, M .
PHYSICAL REVIEW B, 1974, 9 (12) :5168-5177
[7]   INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].
BALSLEV, I .
PHYSICAL REVIEW, 1966, 143 (02) :636-&
[8]   OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].
BALSLEV, I .
PHYSICAL REVIEW, 1968, 173 (03) :762-&
[9]   ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].
BLOOD, P .
PHYSICAL REVIEW B, 1972, 6 (06) :2257-&
[10]   TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
CAMASSEL, J ;
AUVERGNE, D .
PHYSICAL REVIEW B, 1975, 12 (08) :3258-3267
12345678