ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS

被引:114
作者
ASPNES, DE
OLSON, CG
LYNCH, DW
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
[2] IOWA STATE UNIV, DEPT PHYS, AMES, IA 50010 USA
[3] ELECTR RESOURCES DEV AGCY, AMES LAB, AMES, IA 50010 USA
关键词
D O I
10.1103/PhysRevLett.37.766
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:766 / 769
页数:4
相关论文
共 32 条
[1]   ELECTROREFLECTANCE OF GAP TO 27 EV [J].
ASPNES, DE ;
OLSON, CG .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1605-1607
[2]   ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
PHYSICAL REVIEW B, 1975, 12 (06) :2527-2538
[3]   LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&
[4]   MODULATION SPECTROSCOPY AT NON-NORMAL INCIDENCE WITH EMPHASIS ON VACUUM-UV SPECTRAL REGION [J].
ASPNES, DE ;
OLSON, CG ;
LYNCH, DW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :602-607
[5]  
ASPNES DE, TO BE PUBLISHED
[6]  
ASPNES DE, 1976, 13TH P INT C PHYS SE
[7]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[8]   OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].
BALSLEV, I .
PHYSICAL REVIEW, 1968, 173 (03) :762-&
[9]   ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].
BLOOD, P .
PHYSICAL REVIEW B, 1972, 6 (06) :2257-&
[10]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582