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ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION
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PHYSICAL REVIEW B,
1975, 12 (06)
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[5]
ASPNES DE, TO BE PUBLISHED
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ASPNES DE, 1976, 13TH P INT C PHYS SE
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SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS
[J].
PHYSICAL REVIEW B,
1973, 7 (10)
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OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE
[J].
PHYSICAL REVIEW,
1968, 173 (03)
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[9]
ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES
[J].
PHYSICAL REVIEW B,
1972, 6 (06)
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[10]
NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1976, 14 (02)
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