POINT-DEFECTS IN III-V MATERIALS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE

被引：22
|
作者：
HAUTOJARVI, P [1 ]
MAKINEN, J [1 ]
PALKO, S [1 ]
SAARINEN, K [1 ]
CORBEL, C [1 ]
LISZKAY, L [1 ]
机构：
[1] CENS,INSTN,F-91191 GIF SUR YVETTE,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期
关键词：
D O I：
10.1016/0921-5107(93)90216-A
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present understanding of the point defects in GaAs and InP grown n by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type accepters obtained by positron annihilation are given. Depending on the growth temperature. Ga vacancies or small vacancy clusters are seen in LT GaAs in the concentration range 10(18) Cm-(3). No signal from Ga antisites is found. The LT LnP layers contain vacancies. identified as In vacancies, in the concentration range 10(18) cm-(3). Ion-type acceptors, probably In antisites, are also seen in concentrations of 10(17)cm-(3). The annealed layer contains small vacancy clusters.
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页码：16 / 22
页数：7
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