GROWTH OF GALLIUM-ARSENIDE LAYERS BY LIQUID EPITAXY FROM SOLUTION IN AN INDIUM-GALLIUM-ARSENIC MELT

被引：0

|

作者：

MARONCHUK, YE

NEVOROV, VP

机构：

来源：

INORGANIC MATERIALS | 1984年 / 20卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1233 / 1234

页数：2

相关论文

共 50 条

[21] DOPING GALLIUM-ARSENIDE WITH TELLURIUM DURING LIQUID-PHASE EPITAXY FROM GALLIUM-BISMUTH MELTS
YAKUSHEVA, NA
POGADAEV, VG
INORGANIC MATERIALS, 1991, 27 (06) : 950 - 954
[22] VAPOR-PHASE EPITAXY OF GALLIUM-ARSENIDE
ADDAMIAN.A
REPORT OF NRL PROGRESS, 1973, (FEB): : 36 - 37
[23] GALLIUM-ARSENIDE EPITAXY IN SILICON SUBSTRATE WINDOWS
OSINSKII, VI
KATSAPOV, FM
DOKLADY AKADEMII NAUK BELARUSI, 1978, 22 (02): : 123 - 126
[24] NATIVE OXIDE GLASSES FOR INDIUM GALLIUM-ARSENIDE
GRODKIEWICZ, WH
OBRYAN, HM
PASTEUR, GA
PRESSMAN, L
SINGH, S
VANUITERT, LG
ZYDZIK, G
MATERIALS RESEARCH BULLETIN, 1981, 16 (04) : 373 - 376
[25] POLAROGRAPHIC-DETERMINATION OF INDIUM IN GALLIUM-ARSENIDE
LANZA, P
ZANNONI, C
ANNALI DI CHIMICA, 1988, 78 (1-2) : 49 - 54
[26] ELECTRON PHONON INTERACTIONS IN INDIUM GALLIUM-ARSENIDE
NASH, KJ
SKOLNICK, MS
BASS, SJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (06) : 329 - 336
[27] LASER ENHANCED EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE FROM ELEMENTAL ARSENIC
CHU, TL
CHU, SS
GREEN, RF
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 503 - 507
[28] BARRIER OHMIC CONTACTS TO INDIUM GALLIUM-ARSENIDE
MELLOR, PJT
HERNIMAN, J
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 347 - 353
[29] OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS
MINAGAWA, S
NAKAMURA, H
SANO, H
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 377 - 384
[30] ELECTRIC LIQUID EPITAXY OF GALLIUM-ARSENIDE IN ALTERNATING ELECTRIC-FIELDS
DEMIN, VN
NAROZHNYAYA, OV
KUZNETSOV, FA
ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (05): : 142 - 146

← 1 2 3 4 5 →