THEORY OF SCANNING-TUNNELING-MICROSCOPY IMAGES OF OXYGEN-ADSORBED SI(100) SURFACES

被引：17
|
作者：
MIYAMOTO, Y
机构：
[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba 305
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.46.12473
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Simulated scanning-tunneling-microscopy (STM) images of stable and metastable adsorption sites for the O atom on the Si(100) surface have been obtained by first-principles electronic-structure calculations within the local-density approximation. In the simulated STM images of both sites, the positions of O atoms are not seen directly, while the neighboring Si atoms are found to become bright spots. As for the metastable site, the bright spot originating from the surface Si atom moves when the polarity of the tip's voltage is reversed. This phenomenon is due to the electrostatic field of negatively charged O atoms.
引用
收藏
页码：12473 / 12477
页数：5
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