Composition fluctuations in strained InGaAlAs layers grown on (001)InP

被引：0
|
作者：
Murray, RT [1 ]
Kiely, CJ [1 ]
Goodhew, PJ [1 ]
Hopkinson, M [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源：
ELECTRON MICROSCOPY AND ANALYSIS 1995 | 1995年 / 147卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of InGaAlAs/InP(001) heterostructures have been grown by MBE with misfit strains in the range -0.02 to 0.01. TEM studies show that composition modulations occur over a very wide range of InGaAlAs alloys. The composition fluctuations are unusual in that they can result in a highly asymmetric fine scale (3-17 nm) lamellar structure having either a (110) or (1(1) over bar0$) habit plane. AFM studies suggest that the InGaAlAs epilayers also exhibit larger scale unidirectional surface undulations.
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页码：373 / 376
页数：4
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