ON THE INAPPROPRIATE USE OF THE INTRINSIC LEVEL AS A MEASURE OF THE ELECTROSTATIC POTENTIAL IN SEMICONDUCTOR-DEVICES

被引：8

|

作者：

MARSHAK, AH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 03期

关键词：

D O I：

10.1109/EDL.1985.26069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：128 / 129

页数：2

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