MEASUREMENT OF RESISTIVITY OF SILICON EPITAXIAL LAYERS BY 3-POINT PROBE TECHNIQUE

被引：14
|
作者：
GARDNER, EE
SCHUMANN, PA
机构：
来源：
SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 02期
关键词：
D O I：
10.1016/0038-1101(65)90047-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：165 / &
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