STRAIN-INDUCED ANISOTROPY MEASUREMENT IN OXIDE-FILMS GROWN ON SILICON

被引：11
|
作者：
PEDINOFF, ME [1 ]
MAYER, DC [1 ]
STAFSUDD, OM [1 ]
DUNN, GL [1 ]
机构：
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024
来源：
APPLIED OPTICS | 1982年 / 21卷 / 18期
关键词：
D O I：
10.1364/AO.21.003307
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：3307 / 3313
页数：7
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