共 50 条
- [41] HIGH-FIELD CYCLOTRON RESONANCE IN N-TYPE InSb. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 306 - 308
- [42] Conductivity of weakly and strongly localized electrons in a n-type Si/SiGe heterostructure PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 1, NO 1, 2004, 1 (01): : 67 - 70
- [43] INFLUENCE OF ELECTRON DENSITY ON PARAMAGNETIC RESONANCE OF ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 634 - +
- [44] MOBILITY OF ELECTRONS IN N-TYPE CD3-XZNXAS2 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 555 - 557
- [45] INTERFERENCE EFFECTS NEAR CYCLOTRON RESONANCE IN THICK SAMPLES OF N-TYPE INSB BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 364 - &
- [46] DISTORTIONS OF PROFILE OF PARAMAGNETIC-RESONANCE LINE OF CONDUCTION ELECTRONS IN HEAVILY DOPED N-TYPE GE AND N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2054 - &
- [48] SUBMILLIMETER SPIN-RESONANCE OF FREE AND BOUND ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 470 - 471