GROWTH AND CHARACTERIZATION OF INSITU (IN,GA)AS OHMIC CONTACTS TO N-GAAS

被引：0
|
作者：
WRIGHT, SL
MARKS, RF
MARSHALL, ED
SHIH, YC
YOUNG, AB
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90392-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：245 / 246
页数：2
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