COLLECTOR-TOP GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED DIGITAL ICS

被引:25
|
作者
MORIZUKA, K
NOZU, T
TSUDA, K
AZUMA, M
机构
关键词
D O I
10.1049/el:19860216
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
7
引用
收藏
页码:315 / 316
页数:2
相关论文
共 50 条
  • [21] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    FUKANO, H
    KAWAMURA, Y
    TAKANASHI, Y
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 312 - 314
  • [22] FULLY SELF-ALIGNED ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED INTEGRATED-CIRCUITS APPLICATION
    HAYAMA, N
    MADIHIAN, M
    OKAMOTO, A
    TOYOSHIMA, H
    HONJO, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) : 1771 - 1777
  • [23] HIGH-EFFICIENCY OPERATION OF ALGAAS/GAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW COLLECTOR SUPPLY VOLTAGE
    MATSUOKA, Y
    YAMAHATA, S
    NAKATSUGAWA, M
    MURAGUCHI, M
    ISHIBASHI, T
    ELECTRONICS LETTERS, 1993, 29 (11) : 982 - 984
  • [24] HIGH-SPEED INGAAS/INP COMPOSITE COLLECTOR BIPOLAR-TRANSISTORS
    FEYGENSON, A
    HAMM, RA
    RITTER, D
    SMITH, PR
    MONTGOMERY, RK
    YADVISH, RD
    TEMKIN, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2658 - 2658
  • [25] THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    KARNER, M
    TEWS, H
    ZWICKNAGL, P
    SEITZER, D
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 165 - 170
  • [26] HIGH-FREQUENCY ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - THE ROLE OF MOVPE
    PACKEISER, G
    TEWS, H
    ZWICKNAGL, P
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 883 - 892
  • [27] HIGH-FREQUENCY OUTPUT CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CHEN, J
    GAO, GB
    UNLU, MS
    MORKOC, H
    ELECTRONICS LETTERS, 1990, 26 (25) : 2058 - 2060
  • [28] EXTREMELY HIGH PEAK SPECIFIC TRANSCONDUCTANCE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    BARKER, D
    ASHIZAWA, Y
    TASKER, P
    TADAYON, B
    EASTMAN, LF
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) : 313 - 315
  • [29] SURFACE RECOMBINATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIOU, JJ
    YUAN, JS
    SOLID-STATE ELECTRONICS, 1992, 35 (06) : 805 - 813
  • [30] RADIATION HARDNESS CHARACTERISTICS OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    SONG, Y
    KIM, ME
    OKI, AK
    HAFIZI, ME
    CAMOU, JB
    KOBAYASHI, KW
    GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 155 - 158